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Ordering number : ENA0933
VEC2601
SANYO Semiconductors
DATA SHEET
VEC2601
Features
*
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
* * *
A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. Best suited for load switches. 2.5V drive. 0.75mm mount high.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm)1unit Conditions N-channel 30 10 0.15 0.6 0.9 150 --55 to +150 P-channel -20 10 --3 -12 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=80mA 30 1 10 0.4 0.15 0.22 1.3 V A A V S Symbol Conditions Ratings min typ max Unit
Marking : BD
Continued on next page.
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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91207PE TI IM TC-00000864 No. A0933-1/6
VEC2601
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=8V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1.5A ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.3A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0V --20 --1 10 --0.4 2.9 4.9 55 77 112 680 115 80 13 53 77 62 8.2 1.7 2.1 --0.88 --1.2 72 108 168 --1.3 Ratings min typ 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max 3.7 5.2 12.8 Unit pF pF pF ns ns ns ns nC nC nC V V A A V S m m m pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Package Dimensions
unit : mm (typ) 7012-009
0.25
Electrical Connection
8
7
6
5
0.3
0.15
8
7
65
0.25
1
2
2.9
3
0.65
4
1 0.75 2 3 4
1 : Source1 2 : Gate1 3 : Drain2 4 : Drain2 5 : Source2 6 : Gate2 7 : Drain1 8 : Drain1
Top view
2.8
2.3
1 : Source1 2 : Gate1 3 : Drain2 4 : Drain2 5 : Source2 6 : Gate2 7 : Drain1 8 : Drain1 SANYO : VEC8
0.07
No. A0933-2/6
VEC2601
Switching Time Test Circuit
[N-channel]
4V 0V VIN ID=80mA RL=187.5 VIN VDD=15V
[P-channel]
VIN 0V --4.5V VIN ID= --1.5A RL=6.67 VOUT VDD= --10V
D
PW=10s D.C.1%
VOUT
D
PW=10s D.C.1%
G
G
P.G
VEC2601 50
P.G
S
50
VEC2601
S
0.16 0.14 0.12 0.10 0.08
ID -- VDS
5V
[Nch]
0.30
ID -- VGS
VDS=10V
[Nch]
Drain Current, ID -- A
Drain Current, ID -- A
V
6.0
0.15
VGS=1.5V
0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029
0.10
0.05
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030
Drain-to-Source Voltage, VDS -- V
10
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
10
[Nch] Ta=25C
RDS(on) -- ID
75
C
0.20
25
[Nch] VGS=4V
5 7 1.0 IT00032
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
7
5
ID=80mA 40mA
Ta=75C
3
25C --25C
2
1.0 0.01
2
3
5
7
0.1
2
3
Gate-to-Source Voltage, VGS -- V
10
IT00031
RDS(on) -- ID
Drain Current, ID -- A
100 7
[Nch] VGS=2.5V
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5 3 2
5
Ta=75C 25C
3
--25C
10 7 5 3 2
Ta=75C --25C 25C
2
1.0 0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0 IT00033
7
1.0 0.001
2
3
5
7
0.01
2
3
5
Drain Current, ID -- A
No. A0933-3/6
C
[Nch]
7 0.1 IT00034
4.0V
2.
0.25
2.0
V
Ta= --25
3.0 V
3.5V
C
VEC2601
7
RDS(on) -- Ta
[Nch]
1.0
yfs -- ID
[Nch] VDS=10V
6
Forward Transfer Admittance, yfs -- S
7 5 3 2
Static Drain-to-Source On-State Resistance, RDS(on) --
5
4
=2 V GS
=40 , ID .5V
mA
-Ta=
25C
25C
75C
3
80 I D= .0V, =4 VGS
mA
0.1 7 5 3 2
2
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
0.01 0.01
2
3
5
7
0.1
2
3
5
Ambient Temperature, Ta -- C
1.0 7 5
IT00035
IS -- VSD
Drain Current, ID -- A
1000
7 1.0 IT00036
[Nch] VGS=0V
7
SW Time -- ID
[Nch] VDD=15V VGS=4V
Source Current, IS -- A
3 2
Switching Time, SW Time -- ns
5 3 2
td(off)
tf
Ta =
C
75 C
25
7 5 3 2
--2 5
C
0.1
100 7 5 3 2
tr
td(on)
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
10 0.01
2
3
5
7
0.1
2 IT00038
Diode Forward Voltage, VSD -- V
100 7 5
Drain Current, ID -- A
10 9
Ciss, Coss, Crss -- VDS
[Nch] f=1MHz
VGS -- Qg
VDS=10V ID=150mA
[Nch]
Gate-to-Source Voltage, VGS -- V
12 14 16 18 20
8 7 6 5 4 3 2 1
Ciss, Coss, Crss -- pF
3 2
10 7 5 3 2
Ciss Coss
Crss
1.0 0 2 4 6 8 10
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V
2 1.0 7 5
IT00039
Total Gate Charge, Qg -- nC
IT00040
ASO
[Nch]
IDP=0.6A
Drain Current, ID -- A
3 2 0.1 7 5 3 2 0.01 7 5 3 2
ID=0.15A
PW10s 1 10 ms 10 ms 0m s DC (T o a= pe 25 ra C tio )n
Operation in this area is limited by RDS(on).
0.001 0.01
Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57
Drain-to-Source Voltage, VDS -- V
IT12926
No. A0933-4/6
VEC2601
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
ID -- VDS
--3. 0 --2 V .5V
--3. 5
[Pch]
--7
ID -- VGS
VDS= --10V
[Pch]
V --2.0
V
Drain Current, ID -- A
--4.0 V
V --1.8
Drain Current, ID -- A
--6
--5
--4.5
V
--4
--3
--2
--1 0 0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Ta =7 5 C 25 --25 C C
--1.4 --1.6 --1.8
VGS= --1.5V
--2.0
Drain-to-Source Voltage, VDS -- V
160
IT11952
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
160
IT06417
[Pch] Ta=25C
RDS(on) -- Tc
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
140 120 100 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Static Drain-to-Source On-State Resistance, RDS(on) -- m
140
120
ID= --0.3A
--2.0A
100
80
60
.3A = --0 V, I D .8 = --1 VGS 1.0A = -, ID 2.5V = -VGS .0A = --2 V, I D .5 = --4 VGS
40 20 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
3
IT11856
Case Temperature, Tc -- C
--10 7 5 3 2
IT11857
yfs -- ID
[Pch] VDS= --10V
IS -- VSD
[Pch] VGS=0V
Forward Transfer Admittance, yfs -- S
2
7 5 3 2
C --25 Ta=
C 25
C 75
--0.1 7 5 3 2
1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT06420 7
--0.01 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
--0.001 --0.2
Drain Current, ID -- A
5 3
SW Time -- ID
[Pch] VDD= --10V VGS= --4.5V
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
5C 25 C --25 C
10
Source Current, IS -- A
Ta= 7
--1.0 7 5 3 2
IT06421
[Pch] f=1MHz
Switching Time, SW Time -- ns
2
1000
100 7 5 3 2
td(off)
tf
Ciss, Coss, Crss -- pF
7 5 3 2
Ciss
tr
td(on)
Coss
100 7 5 3
Crss
10 7 5 --0.1
2
3
5
7
--1.0
2
3
5
7
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain Current, ID -- A
IT06422
Drain-to-Source Voltage, VDS -- V
IT06423
No. A0933-5/6
VEC2601
--4.5 --4.0 --3.5
VGS -- Qg
VDS= --10V ID= --3A
[Pch]
3 2 --10 7 5
ASO
IDP= --12A ID= --3A
PW10s 10 0 1m s s 10 ms
[Pch]
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
--3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 IT12927
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
10
DC
0m
s
op
era
tio
Operation in this area is limited by RDS(on).
n(T a
=2
5C )
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT12928
[Nch, Pch]
Allowable Power Dissipation, PD -- W
1.0 0.9 0.8
M
ou
nte
do
na
ce
0.6
ram
ic
bo
ard
0.4
(9
00
mm
2
0
0.2
.8m
m)
1u
nit
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT12929
Note on usage : Since the VEC2601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice.
PS No. A0933-6/6

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